ELECTROLYTE ELECTROREFLECTANCE STUDY OF THE EFFECTS OF ANODIZATION AND OF CHEMOMECHANICAL POLISH ON HG1-XCDXTE

被引:47
作者
LASTRASMARTINEZ, A [1 ]
LEE, U [1 ]
ZEHNDER, J [1 ]
RACCAH, PM [1 ]
机构
[1] UNIV ILLINOIS,DEPT PHYS,CHICAGO,IL 60680
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 21卷 / 01期
关键词
D O I
10.1116/1.571702
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:157 / 160
页数:4
相关论文
共 10 条
[1]   THIRD-DERIVATIVE MODULATION SPECTROSCOPY WITH LOW-FIELD ELECTROREFLECTANCE [J].
ASPNES, DE .
SURFACE SCIENCE, 1973, 37 (01) :418-442
[2]   CHEMICAL ETCHING AND CLEANING PROCEDURES FOR SI, GE, AND SOME III-V COMPOUND SEMICONDUCTORS [J].
ASPNES, DE ;
STUDNA, AA .
APPLIED PHYSICS LETTERS, 1981, 39 (04) :316-318
[3]   ELECTROREFLECTANCE OF ION-IMPLANTED GAAS [J].
BROWN, RL ;
SCHOONVELD, L ;
ABELS, LL ;
SUNDARAM, S ;
RACCAH, PM .
JOURNAL OF APPLIED PHYSICS, 1981, 52 (04) :2950-2957
[4]   FUNDAMENTAL REFLECTION OF CDXHG1-XTE CRYSTALS IN 1.9 TO 3.1 EV ENERGY-RANGE [J].
KISIEL, A ;
PODGORNY, M ;
RODZIK, A ;
GIRIAT, W .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 71 (02) :457-460
[5]   VARIATIONS IN COMPOSITION IN BINARY AND TERNARY SEMICONDUCTORS UTILIZING ELECTROLYTE ELECTROREFLECTANCE - TOPOGRAPHICAL INVESTIGATION [J].
POLLAK, FH ;
OKEKE, CE ;
VANIER, PE ;
RACCAH, PM .
JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) :4216-4222
[6]   VARIATIONS IN THE CARRIER CONCENTRATION IN ELEMENTAL AND COMPOUND SEMICONDUCTORS UTILIZING ELECTROLYTE ELECTROREFLECTANCE - TOPOGRAPHICAL INVESTIGATION [J].
POLLAK, FH ;
OKEKE, CE ;
VANIER, PE ;
RACCAH, PM .
JOURNAL OF APPLIED PHYSICS, 1979, 50 (08) :5375-5380
[7]  
RIGHER DR, 1982, J VAC SCI TECHNOL, V21
[8]  
SCHMIT JD, UNPUB
[9]   UPS STUDY OF THE ELECTRONIC-STRUCTURE OF HG1-XCDX TE - BREAKDOWN OF THE VIRTUAL CRYSTAL APPROXIMATION [J].
SILBERMAN, JA ;
MORGEN, P ;
LINDAU, I ;
SPICER, WE ;
WILSON, JA .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1982, 21 (01) :142-145
[10]  
ZOLSBACK U, 1980, SURF SCI, V87, P191