DANGLING BOND ELECTRON SPIN-LATTICE RELAXATION IN RF-SPUTTERED HYDROGENATED AMORPHOUS-SILICON AND SILICON-CARBIDE

被引：1

作者：

DEY, S ^{[1
]}

TORGESON, DR ^{[1
]}

BARNES, RG ^{[1
]}

机构：

[1] IOWA STATE UNIV SCI & TECHNOL,DEPT PHYS,AMES,IA 50011

来源：

APPLIED PHYSICS LETTERS | 1986年 / 49卷 / 17期

关键词：

D O I：

10.1063/1.97431

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：1092 / 1094

页数：3

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共 11 条

[1] DIVACANCY IN SILICON - SPIN-LATTICE RELAXATION AND PASSAGE EFFECTS IN ELECTRON-PARAMAGNETIC RESONANCE
AMMERLAAN, CAJ
VANDERWIEL, A
[J]. JOURNAL OF MAGNETIC RESONANCE, 1976, 21 (03) : 387 - 396
[2] ELECTRON SPIN RESONANCE IN AMORPHOUS SILICON, GERMANIUM, AND SILICON CARBIDE
BRODSKY, MH
TITLE, RS
[J]. PHYSICAL REVIEW LETTERS, 1969, 23 (11) : 581 - &
[3] TEMPERATURE-DEPENDENCE OF ELECTRON-SPIN-RESONANCE SPECTRA OF DOPED A-SI-H
DERSCH, H
STUKE, J
BEICHLER, J
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 107 (01): : 307 - 317
[4] ELECTRON-SPIN RESONANCE OF DOPED GLOW-DISCHARGE AMORPHOUS-SILICON
DERSCH, H
STUKE, J
BEICHLER, J
[J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1981, 105 (01): : 265 - 274
[5] DEY S, 1986, THESIS IOWA STATE U
[6] DOPING AND ANNEALING EFFECTS ON ESR IN CHEMICALLY VAPOR-DEPOSITED AMORPHOUS SILICON
HASEGAWA, S
KASAJIMA, T
SHIMIZU, T
[J]. SOLID STATE COMMUNICATIONS, 1979, 29 (01) : 13 - 16
[7] GLOW-DISCHARGE A-SI1-XCX - H FILMS STUDIED BY ELECTRON-SPIN-RESONANCE AND IR MEASUREMENTS
MORIMOTO, A
MIURA, T
KUMEDA, M
SHIMIZU, T
[J]. JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1982, 21 (02): : L119 - L121
[8] POOLE CP, 1983, ELECTRON SPIN RESONA
[9] STRONGLY PHONON-BOTTLENECKED SPIN-LATTICE RELAXATION OF DANGLING BONDS IN SPUTTERED ALPHA-SI EVIDENCED BY CHEMICAL ETCHING
STESMANS, A
YUE, W
WITTERS, J
[J]. SOLID STATE COMMUNICATIONS, 1984, 52 (05) : 525 - 530
[10] STUKE J, 1977, 7TH P INT C AM LIQ S, P406