REACTION BETWEEN HYDROGENATED AMORPHOUS-SILICON AND ALUMINUM FILM

[1] Blum N. A., 1972, Journal of Non-Crystalline Solids, V11, P242, DOI 10.1016/0022-3093(72)90006-3

[2] BOWER RW, 1973, APPL PHYS LETT, V23, P99, DOI 10.1063/1.1654823

[3] CHRISTIAN JW, 1965, PHYSICAL METALLURGY, P443

[4] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3906 - 3911

[5] HANSEN PH, 1958, CONSTITUTION BINARY, P132

[6] SOLID-PHASE CRYSTALLIZATION OF SI FILMS IN CONTACT WITH AI LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (07) : 2897 - 2904

[7] LAU SS, 1980, HDB SEMICONDUCTORS, V3, P531

[8] MATSUMURA S, 1982, OYO BUTURI, V51, P816

[9] DIFFUSIVITY AND SOLUBILITY OF SI IN AL METALLIZATION OF INTEGRATED CIRCUITS [J]. APPLIED PHYSICS LETTERS, 1971, 19 (12) : 524 - &

[10] INTERACTION OF AL LAYERS WITH POLYCRYSTALLINE SI [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (11) : 4678 - 4684

[1] Blum N. A., 1972, Journal of Non-Crystalline Solids, V11, P242, DOI 10.1016/0022-3093(72)90006-3

[2] BOWER RW, 1973, APPL PHYS LETT, V23, P99, DOI 10.1063/1.1654823

[3] CHRISTIAN JW, 1965, PHYSICAL METALLURGY, P443

[4] SUBSTRATE-ORIENTATION DEPENDENCE OF EPITAXIAL REGROWTH RATE FROM SI-IMPLANTED AMORPHOUS SIA [J]. JOURNAL OF APPLIED PHYSICS, 1978, 49 (07) : 3906 - 3911

[5] HANSEN PH, 1958, CONSTITUTION BINARY, P132

[6] SOLID-PHASE CRYSTALLIZATION OF SI FILMS IN CONTACT WITH AI LAYERS [J]. JOURNAL OF APPLIED PHYSICS, 1977, 48 (07) : 2897 - 2904

[7] LAU SS, 1980, HDB SEMICONDUCTORS, V3, P531

[8] MATSUMURA S, 1982, OYO BUTURI, V51, P816

[9] DIFFUSIVITY AND SOLUBILITY OF SI IN AL METALLIZATION OF INTEGRATED CIRCUITS [J]. APPLIED PHYSICS LETTERS, 1971, 19 (12) : 524 - &

[10] INTERACTION OF AL LAYERS WITH POLYCRYSTALLINE SI [J]. JOURNAL OF APPLIED PHYSICS, 1975, 46 (11) : 4678 - 4684