RAMAN-SCATTERING STUDIES OF ALUMINUM NITRIDE AT HIGH-PRESSURE

被引：127

作者：

PERLIN, P ^{[1
]}

POLIAN, A ^{[1
]}

SUSKI, T ^{[1
]}

机构：

[1] POLISH ACAD SCI,UNIPRESS,HIGH PRESSURE RES CTR,PL-01142 WARSAW,POLAND

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 05期

关键词：

D O I：

10.1103/PhysRevB.47.2874

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Single crystals of aluminum nitride were studied by Raman scattering under hydrostatic pressure up to 13 GPa. Four of the six allowed modes were observed and identified. Our results under ambient conditions do not agree with already published data. The A1 (TO), E2(2), and E1(LO) have been followed as a function of pressure and have mode-Gruneisen coefficients of 1.58, 1.26, and 0.38, respectively. These data are compared with recent data obtained on single crystals of gallium nitride.

引用

页码：2874 / 2877

页数：4

共 24 条

[1] FIRST-ORDER RAMAN EFFECT IN WURTZITE-TYPE CRYSTALS [J].

ARGUELLO, CA ;

ROUSSEAU, DL ;

PORTO, SPS .

PHYSICAL REVIEW, 1969, 181 (03) :1351-&

[2] RAMAN SPECTRA OF ALN CUBIC BN AND BP [J].

BRAFMAN, O ;

LENGYEL, G ;

MITRA, SS ;

GIELISSE, PJ ;

PLENDL, JN ;

MANSUR, LC .

SOLID STATE COMMUNICATIONS, 1968, 6 (08) :523-&

[3] OPTICAL PHONONS OF ALUMINUM NITRIDE [J].

CARLONE, C ;

LAKIN, KM ;

SHANKS, HR .

JOURNAL OF APPLIED PHYSICS, 1984, 55 (11) :4010-4014

[4] HIGH-PRESSURE PHASE-TRANSITION IN ALUMINUM NITRIDE [J].

GORCZYCA, I ;

CHRISTENSEN, NE ;

PERLIN, P ;

GRZEGORY, I ;

JUN, J ;

BOCKOWSKI, M .

SOLID STATE COMMUNICATIONS, 1991, 79 (12) :1033-1034

[5]

GRZEGORY I, 1992, HIGH PRESSURE RES, V9, P288

[6] RAMAN-SCATTERING IN ALXGA1-XN ALLOYS [J].

HAYASHI, K ;

ITOH, K ;

SAWAKI, N ;

AKASAKI, I .

SOLID STATE COMMUNICATIONS, 1991, 77 (02) :115-118

[7] METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH AND PROPERTIES OF GAN/AL0.1GA0.9N LAYERED STRUCTURES [J].

ITOH, K ;

KAWAMOTO, T ;

AMANO, H ;

HIRAMATSU, K ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1991, 30 (9A) :1924-1927

[8] RAMAN-SPECTROSCOPY AND THEORETICAL MODELING OF BEO AT HIGH-PRESSURE [J].

JEPHCOAT, AP ;

HEMLEY, RJ ;

MAO, HK ;

COHEN, RE ;

MEHL, MJ .

PHYSICAL REVIEW B, 1988, 37 (09) :4727-4734

[9] VERTICAL-CAVITY, ROOM-TEMPERATURE STIMULATED-EMISSION FROM PHOTOPUMPED GAN FILMS DEPOSITED OVER SAPPHIRE SUBSTRATES USING LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

KHAN, MA ;

OLSON, DT ;

VANHOVE, JM ;

KUZNIA, JN .

APPLIED PHYSICS LETTERS, 1991, 58 (14) :1515-1517

[10]

Le Toullec R., 1988, HIGH PRESSURE RES, V1, P77, DOI 10.1080/08957958808202482

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