NEW MODELING OF GAAS-MESFETS

被引：19

作者：

HARIU, T

TAKAHASHI, K

SHIBATA, Y

机构：

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1983年 / 30卷 / 12期

关键词：

D O I：

10.1109/T-ED.1983.21439

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1743 / 1749

页数：7

共 9 条

[1] GENERAL THEORY FOR PINCHED OPERATION OF JUNCTION-GATE FET [J].

GREBENE, AB ;

GHANDHI, SK .

SOLID-STATE ELECTRONICS, 1969, 12 (07) :573-+

[2]

HARIU T, 1982, JAPAN J APPL PHYS, V21, P77

[3] ESTIMATION OF GAAS STATIC RAM PERFORMANCE [J].

INO, M ;

HIRAYAMA, M ;

KURUMADA, K ;

OHMORI, M .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (07) :1130-1135

[4] ANALYSIS FOR OPTIMUM THRESHOLD VOLTAGE AND LOAD CURRENT OF E-D-TYPE GAAS DCFL CIRCUITS [J].

INO, M ;

HIRAYAMA, M ;

OHMORI, M .

ELECTRONICS LETTERS, 1981, 17 (15) :522-523

[5] VOLGATE-CURRENT CHARACTERISTICS OF GAAS J-FETS IN HOT ELECTRON RANGE [J].

LEHOVEC, K ;

ZULEEG, R .

SOLID-STATE ELECTRONICS, 1970, 13 (10) :1415-&

[6] A UNIPOLAR FIELD-EFFECT TRANSISTOR [J].

SHOCKLEY, W .

PROCEEDINGS OF THE INSTITUTE OF RADIO ENGINEERS, 1952, 40 (11) :1365-1376

[7] UNIFIED DEFECT MODEL AND BEYOND [J].

SPICER, WE ;

LINDAU, I ;

SKEATH, P ;

SU, CY .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1980, 17 (05) :1019-1027

[8]

TOYODA N, 1981, IECE ED80126 TECH GR

[9] GAAS LSI-DIRECTED MESFETS WITH SELF-ALIGNED IMPLANTATION FOR N+-LAYER TECHNOLOGY (SAINT) [J].

YAMASAKI, K ;

ASAI, K ;

KURAMADA, K .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1982, 29 (11) :1772-1777

← 1 →