POSSIBILITY OF GUNN EFFECT IN INHOMOGENEOUS SEMICONDUCTORS

被引：2

|

作者：

DAS, P

MAROM, E

机构：

来源：

PHYSICS LETTERS | 1966年 / 20卷 / 05期

关键词：

D O I：

10.1016/0031-9163(66)90942-5

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

引用

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页码：444 / &

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