EFFECT OF DEFECT FIELDS ON OPTICAL ABSORPTION EDGE

被引：253
作者：
REDFIELD, D
机构：
来源：
PHYSICAL REVIEW | 1963年 / 130卷 / 03期
关键词：
D O I：
10.1103/PhysRev.130.916
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：916 / &
相关论文
共 14 条
[1]  
DIXON JR, 1960, PHYS REV, V123, P1560
[2]   OPTICAL ABSORPTION AND RECOMBINATION RADIATION IN SEMICONDUCTORS DUE TO TRANSITIONS BETWEEN HYDROGEN-LIKE ACCEPTOR IMPURITY LEVELS AND THE CONDUCTION BAND [J].
EAGLES, DM .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1960, 16 (1-2) :76-83
[3]  
FRANZ W, 1958, Z NATURFORSCH, VA 13, P484
[4]   Acceleration of electrons in a crystal lattice [J].
Houston, WV .
PHYSICAL REVIEW, 1940, 57 (03) :184-186
[5]  
JEFFREYS, 1956, METHODS MATHEMATICAL
[6]  
JOHNSON EJ, 1962, B AM PHYS SOC, V7, P185
[7]  
KELDYSH LV, 1958, SOV PHYS JETP-USSR, V7, P788
[8]  
KNOX RS, TO BE PUBLISHED
[9]   THE OPTICAL ABSORPTION EDGE IN IONIC CRYSTALS [J].
MARTIENSSEN, W .
JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1959, 8 :294-296
[10]  
MORSE PM, 1963, METHODS THEORETICAL
12