INALAS/INGAAS HIGH-ELECTRON-MOBILITY TRANSISTORS ON LOW-TEMPERATURE INALAS BUFFER LAYERS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：14

作者：

PAN, N ^{[1
]}

ELLIOTT, J ^{[1
]}

HENDRIKS, H ^{[1
]}

AUCOIN, L ^{[1
]}

FAY, P ^{[1
]}

ADESIDA, I ^{[1
]}

机构：

[1] UNIV ILLINOIS,CTR COMPOUND SEMICOND MICROELECTR,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 02期

关键词：

D O I：

10.1063/1.113137

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InAlAs/InGaAs high electron mobility transistors (HEMT) with excellent high frequency performance were demonstrated. Device sizes of 0.25×50 μm and 0.10×50 μm showed current gain cutoff frequencies of 143 and 205 GHz, respectively. The HEMT structures were grown on a low temperature InAlAs buffer layers designed to eliminate conductive impurity spikes situated at the epitaxial/substrate interface. The highly resistive buffer layer (2×105 Ω cm) was obtained at a growth temperature of 475°C using a combination of trimethylarsenic and arsine as the arsenic sources. © 1995 American Institute of Physics.

引用

页码：212 / 214

页数：3

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