INALAS/INGAAS HIGH-ELECTRON-MOBILITY TRANSISTORS ON LOW-TEMPERATURE INALAS BUFFER LAYERS BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION

被引：14

作者：

PAN, N ^{[1
]}

ELLIOTT, J ^{[1
]}

HENDRIKS, H ^{[1
]}

AUCOIN, L ^{[1
]}

FAY, P ^{[1
]}

ADESIDA, I ^{[1
]}

机构：

[1] UNIV ILLINOIS,CTR COMPOUND SEMICOND MICROELECTR,URBANA,IL 61801

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 02期

关键词：

D O I：

10.1063/1.113137

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

InAlAs/InGaAs high electron mobility transistors (HEMT) with excellent high frequency performance were demonstrated. Device sizes of 0.25×50 μm and 0.10×50 μm showed current gain cutoff frequencies of 143 and 205 GHz, respectively. The HEMT structures were grown on a low temperature InAlAs buffer layers designed to eliminate conductive impurity spikes situated at the epitaxial/substrate interface. The highly resistive buffer layer (2×105 Ω cm) was obtained at a growth temperature of 475°C using a combination of trimethylarsenic and arsine as the arsenic sources. © 1995 American Institute of Physics.

引用

页码：212 / 214

页数：3

共 50 条

[21] OPTIMIZATION OF BUFFER LAYERS FOR ALGAAS INGAAS GAAS PSEUDOMORPHIC HIGH ELECTRON-MOBILITY TRANSISTORS BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].

PAN, N ;

JACKSON, GS ;

CARTER, J ;

HENDRIKS, H ;

BRIERLEY, SK .

JOURNAL OF ELECTRONIC MATERIALS, 1992, 21 (02) :199-203

[22] SEMIINSULATING INP GROWN AT LOW-TEMPERATURE BY METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

GARDNER, NF ;

HARTMANN, QJ ;

STOCKMAN, SA ;

STILLMAN, GE ;

BAKER, JE ;

MALIN, JI ;

HSIEH, KC .

APPLIED PHYSICS LETTERS, 1994, 65 (03) :359-361

[23] High Performance InAlAs/InAs/InGaAs Pseudomorphic High Electron Mobility Transistors. [J].

Wakimura, Nobuhito ;

Nakagawa, Yugo ;

Taguchi, Hirohisa ;

Iida, Tsutomu ;

Takanashi, Yoshifumi .

PERFORMANCE AND RELIABILITY OF SEMICONDUCTOR DEVICES, 2009, 1108 :91-96

[24] Stress relaxation by surface rippling and dislocation generation in mismatched channels of InGaAs/InAlAs/InP high-electron-mobility transistors [J].

Peiró, F ;

Cornet, A ;

Beck, M ;

Py, MA .

APPLIED PHYSICS LETTERS, 1999, 74 (25) :3818-3820

[25] LOW-TEMPERATURE METALORGANIC CHEMICAL-VAPOR-DEPOSITION GROWTH OF INGAAS FOR A NONALLOYED OHMIC CONTACT TO N-GAAS [J].

WATANABE, N ;

NITTONO, T ;

ITO, H .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS, 1994, 33 (3A) :L271-L274

[26] MOLECULAR-BEAM EPITAXIAL-GROWTH OF PSEUDOMORPHIC INALAS/INGAAS HIGH-ELECTRON-MOBILITY TRANSISTORS WITH HIGH CUTOFF FREQUENCIES [J].

KLEIN, W ;

BOHM, G ;

HEISS, H ;

KRAUS, S ;

XU, D ;

SEMERAD, R ;

TRANKLE, G ;

WEIMANN, G .

JOURNAL OF CRYSTAL GROWTH, 1995, 150 (1-4) :1252-1255

[27] LOW-TEMPERATURE GROWTH OF HIGH-RESISTIVITY GAAS BY PHOTOASSISTED METALORGANIC CHEMICAL-VAPOR-DEPOSITION [J].

ROBERTS, JC ;

BOUTROS, KS ;

BEDAIR, SM ;

LOOK, DC .

APPLIED PHYSICS LETTERS, 1994, 64 (18) :2397-2399

[28] Optimization of growth conditions for InGaAs/InAlAs/InP quantum cascade lasers by metalorganic chemical vapor deposition [J].

Huang, Yong ;

Ryou, Jae-Hyun ;

Dupuis, Russell D. ;

Pfluegl, Christian ;

Capasso, Federico ;

Sun, Kewei ;

Fischer, Alec M. ;

Ponce, Fernando A. .

JOURNAL OF CRYSTAL GROWTH, 2011, 316 (01) :75-80

[29] Temperature-graded InAlAs buffers applied on InGaAs/InAlAs/InP high electron mobility transistor heterostructures [J].

Arbiol, J ;

Peiró, F ;

Cornet, A ;

Michelakis, K ;

Georgakilas, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1999, 17 (06) :2540-2544

[30] Simulation of InAlAs/InGaAs high electron mobility transistors with a single set of physical parameters [J].

Quay, R ;

Palankovski, V ;

Chertouk, M ;

Leuther, A ;

Selberherr, S .

INTERNATIONAL ELECTRON DEVICES MEETING 2000, TECHNICAL DIGEST, 2000, :186-189

← 1 2 3 4 5 →