STRUCTURAL-ANALYSIS OF DOMAIN BOUNDARIES ON SI(111)7X7 SURFACES BY SCANNING TUNNELING MICROSCOPE

被引：2

作者：

GU, QJ ^{[1
]}

ZHAO, WB ^{[1
]}

MA, ZL ^{[1
]}

LIU, N ^{[1
]}

XUE, ZQ ^{[1
]}

PANG, SJ ^{[1
]}

机构：

[1] CHINESE ACAD SCI,BEIJING LAB VACUUM PHYS,BEIJING 100080,PEOPLES R CHINA

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1995年 / 13卷 / 03期

关键词：

D O I：

10.1116/1.587834

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The scanning tunneling microscope has been used to study domain boundaries on Si(111)7 × 7 surfaces. Several kinds of regular defect structures along the domain boundaries on Si(111)7 × 7 surfaces have been observed with atom resolution. By combining with the dimer-adatom-stacking fault model, their detailed atom structural models are given. It is found that there are three important factors that determine the boundary structure. The most important factor is the strong interaction between dimer and adatom. The next one, in some cases, is the difference between the faulted half and the unfaulted half. Additionally, the metastable (2n + 1) × (2n + 1) triangle subunit structure such as the 5 × 5 triangle subunit may play an important role in determining the defect structure along the domain boundary in some cases.

引用

页码：1261 / 1264

页数：4

共 50 条

[21] SURFACE PHOTOVOLTAGE OF AG ON SI(111)-7X7 BY SCANNING TUNNELING MICROSCOPY
CAHILL, DG
HAMERS, RJ
PHYSICAL REVIEW B, 1991, 44 (03): : 1387 - 1390
[22] ON THE INTERPRETATION OF CURRENT IMAGES IN SCANNING TUNNELING SPECTROSCOPY OF SI(111)7X7
BERGHAUS, T
BRODDE, A
NEDDERMEYER, H
TOSCH, S
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1988, 6 (02): : 483 - 487
[23] FABRICATION OF ATOMIC-SCALE STRUCTURES ON SI(111)-7X7 USING A SCANNING TUNNELING MICROSCOPE (STM)
HUANG, DH
UCHIDA, H
AONO, M
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 1992, 31 (12B): : 4501 - 4503
[24] Scanning tunneling microscopy of charge transfer on the Si(111)7X7 surface
Jeon, D
Hashizume, T
Sakurai, T
APPLIED SURFACE SCIENCE, 1996, 94-5 : 493 - 496
[25] ATOMIC MODIFICATION OF AN SI(111)7X7 SURFACE WITH ADSORBED CHLORINE ATOMS USING A SCANNING TUNNELING MICROSCOPE
BABA, M
MATSUI, S
APPLIED PHYSICS LETTERS, 1994, 65 (15) : 1927 - 1929
[26] Scanning tunneling microscope mediated nanostructure fabrication from GeH4 on Si(111)-(7x7)
Schöffel, UR
Rauscher, H
Behm, RJ
APPLIED PHYSICS LETTERS, 2003, 83 (18) : 3794 - 3796
[27] THRESHOLD HEIGHT FOR MOVEMENT OF C-60 MOLECULES ON SI(111)-7X7 WITH A SCANNING TUNNELING MICROSCOPE
MARUNO, S
INANAGA, K
ISU, T
APPLIED PHYSICS LETTERS, 1993, 63 (10) : 1339 - 1341
[28] Ultrahigh vacuum scanning force scanning tunneling microscope: Application to high-resolution imaging of Si(111)7x7
Olsson, L
Wigren, R
Erlandsson, R
REVIEW OF SCIENTIFIC INSTRUMENTS, 1996, 67 (06): : 2289 - 2296
[29] Structural analysis of Si(111)-7 x 7 domain boundaries with takayanaki cores
Zhao, YF
Zhang, ZH
Yang, HQ
Xue, ZQ
Pang, SJ
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 2000, 18 (02): : 320 - 324
[30] Boundaries of 7x7 reconstruction domains on Si(111)
Zhou, Yinghui
Zhou, Changjie
Zhan, Huahan
Wu, Qihui
Kang, Junyong
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 9 (1-3) : 279 - 282

← 1 2 3 4 5 →