SLOW CONDUCTING OSCILLATIONS IN NANOSCALE SILICON CLUSTERS OF QUANTUM DOTS

被引：20
作者：
TSU, R
LI, XL
NICOLLIAN, EH
机构：
[1] University of North Carolina at Charlotte, Charlotte
来源：
APPLIED PHYSICS LETTERS | 1994年 / 65卷 / 07期
关键词：
D O I：
10.1063/1.112178
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
At fixed reverse bias voltages of a diode structure consisting of nanoscale silicon particles embedded in an amorphous SiO2 matrix, conductance oscillation in time is observed on some samples at room temperature. Possible mechanisms of the conductance oscillations include the exchange of electrons between the quantum confined states coupled to localized defects and the charge state of these defects. The precise origin of the observed oscillations has not been identified.
引用
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页码：842 / 844
页数：3
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