HIGH COERCIVITY OF BARIUM FERRITE (BAM) FILMS DEPOSITED BY ARC-DISCHARGE EVAPORATION

被引:5
|
作者
MATSUSHITA, N
NAOE, M
机构
[1] Dept. of Physical Electronics, Tokyo Institute of Technology, 2-12-1 O-okayama, Meguro-ku
关键词
D O I
10.1109/20.281399
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A magnetoplumbite type of barium ferrite (BaM) films has been deposited by using an are discharge evaporation method and then dependence of magnetic properties, crystal structure and Mossbauer spectra on annealing temperature T-A have been investigated. BaM films deposited at substrate temperature T-s of 150 degrees C anti then annealed at 800 degrees C exhibited large saturation magnetization M(s), the same as that of the bulk BaM (380 cmu/cc), and coercivity H-c as high as 2 kOe. These M(s) and H-c were almost the same as those of BaM films deposited at T-s above 500 degrees C. Since BaM films prepared In this study have moderately large M(s) and properly high H-c, they may be applicable fur recording layers of rigid magnetic disks with high density.
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页码:4089 / 4091
页数:3
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