LASER SELECTIVE DEPOSITION OF GAAS ON SI

被引：23

作者：

BEDAIR, SM

WHISNANT, JK

KARAM, NH

TISCHLER, MA

KATSUYAMA, T

机构：

来源：

APPLIED PHYSICS LETTERS | 1986年 / 48卷 / 02期

关键词：

D O I：

10.1063/1.96934

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：174 / 176

页数：3

共 13 条

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