共 41 条
- [1] X-3(-)-CENTER GENERATION IN KBR CRYSTAL AT IMPULSIVE ELECTRON-IRRADIATION FIZIKA TVERDOGO TELA, 1981, 23 (04): : 1214 - 1216
- [2] INFLUENCE OF LI IONS ON THE ACCUMULATION OF RADIATION DEFECTS IN KBR UNDER PULSED ELECTRON-IRRADIATION PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1988, 147 (02): : K109 - K113
- [3] KINETICS OF DEFECT ACCUMULATION UNDER ELECTRON-IRRADIATION IN KBR AT 4-K PHYSICAL REVIEW B, 1979, 20 (04): : 1678 - 1686
- [4] EFFECT OF POWERFUL PULSED ELECTRON-IRRADIATION ON CREATION OF HOLE COLOR-CENTERS IN KCL AT 300-K PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1984, 125 (01): : K37 - K40
- [5] TEMPERATURE EFFECT ON THE DESTRUCTION OF GLASS UNDER ELECTRON-IRRADIATION IZVESTIYA VYSSHIKH UCHEBNYKH ZAVEDENII FIZIKA, 1991, 34 (04): : 14 - 16
- [6] EFFECT OF IRRADIATION TEMPERATURE ON ACCUMULATION EFFICIENCY OF POSITRON-ANNIHILATION CENTERS IN KBR FIZIKA TVERDOGO TELA, 1983, 25 (11): : 3500 - 3502
- [7] ACCUMULATION OF RADIATIVE RECOMBINATION CENTERS IN SILICON DUE TO HIGH-TEMPERATURE ELECTRON-IRRADIATION SOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (01): : 67 - 70
- [8] The radiation creation mechanism of X-3(-)-centers in KCl, KBr and Ki crystals at plastic and elastic stress BULLETIN OF THE UNIVERSITY OF KARAGANDA-PHYSICS, 2010, 2 (58): : 18 - 25
- [10] Effect of the Electron-Irradiation Temperature on the Formation of Radiation Defects in Silicon Carbide JOURNAL OF SURFACE INVESTIGATION, 2023, 17 (02): : 397 - 400