Metal-organic chemical vapor deposition of semiconducting III/VI In2Se3 thin films form the single-source precursor: In[SeC(SiMe(3))(3)](3)

被引：36
|
作者：
Cheon, JW [1 ]
Arnold, J [1 ]
Yu, KM [1 ]
Bourret, ED [1 ]
机构：
[1] UNIV CALIF BERKELEY,DEPT CHEM,BERKELEY,CA 94720
来源：
CHEMISTRY OF MATERIALS | 1995年 / 7卷 / 12期
关键词：
D O I：
10.1021/cm00060a014
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Thin films of In2Se3 have been prepared by metal-organic chemical vapor deposition (MOCVD) using volatile In[SeC(SiMe(3))(3)](3) as the precursor. The influence of growth parameters on the formation of crystalline phases and on the morphologies of In2Se3 films were examined by X-ray diffraction and scanning electron microscopy. The stoichiometry of the films was determined by Rutherford backscattering spectroscopy (RBS).
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收藏
页码：2273 / 2276
页数：4
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