ELECTRON-TUNNELING INTO BI THIN-FILMS UNDER PRESSURE

被引:1
作者
ZATET, MC [1 ]
GUNTHER, L [1 ]
RATNAM, BA [1 ]
TEDROW, PM [1 ]
机构
[1] MIT,FRANCIS BITTER NATL MAGNET LAB,CAMBRIDGE,MA 02139
关键词
D O I
10.1063/1.336861
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:191 / 194
页数:4
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