ELECTRON-TUNNELING INTO BI THIN-FILMS UNDER PRESSURE

被引：1
|
作者：
ZATET, MC [1 ]
GUNTHER, L [1 ]
RATNAM, BA [1 ]
TEDROW, PM [1 ]
机构：
[1] MIT,FRANCIS BITTER NATL MAGNET LAB,CAMBRIDGE,MA 02139
来源：
JOURNAL OF APPLIED PHYSICS | 1986年 / 59卷 / 01期
关键词：
D O I：
10.1063/1.336861
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：191 / 194
页数：4
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