首页
学术期刊
论文检测
AIGC检测
热点
更多
数据
PROPERTIES OF INTERFACE STATES AT COMPOUND SEMICONDUCTOR HOMO-INTERFACE AND HETERO-INTERFACE
被引:0
作者
:
HASEGAWA, H
论文数:
0
引用数:
0
h-index:
0
机构:
HOKKAIDO UNIV,FAC ENGN,DEPT ELECT ENGN,SAPPORO,HOKKAIDO 060,JAPAN
HOKKAIDO UNIV,FAC ENGN,DEPT ELECT ENGN,SAPPORO,HOKKAIDO 060,JAPAN
HASEGAWA, H
[
1
]
IKEDA, E
论文数:
0
引用数:
0
h-index:
0
机构:
HOKKAIDO UNIV,FAC ENGN,DEPT ELECT ENGN,SAPPORO,HOKKAIDO 060,JAPAN
HOKKAIDO UNIV,FAC ENGN,DEPT ELECT ENGN,SAPPORO,HOKKAIDO 060,JAPAN
IKEDA, E
[
1
]
OHTSUKA, S
论文数:
0
引用数:
0
h-index:
0
机构:
HOKKAIDO UNIV,FAC ENGN,DEPT ELECT ENGN,SAPPORO,HOKKAIDO 060,JAPAN
HOKKAIDO UNIV,FAC ENGN,DEPT ELECT ENGN,SAPPORO,HOKKAIDO 060,JAPAN
OHTSUKA, S
[
1
]
SAITOH, T
论文数:
0
引用数:
0
h-index:
0
机构:
HOKKAIDO UNIV,FAC ENGN,DEPT ELECT ENGN,SAPPORO,HOKKAIDO 060,JAPAN
HOKKAIDO UNIV,FAC ENGN,DEPT ELECT ENGN,SAPPORO,HOKKAIDO 060,JAPAN
SAITOH, T
[
1
]
OHNO, H
论文数:
0
引用数:
0
h-index:
0
机构:
HOKKAIDO UNIV,FAC ENGN,DEPT ELECT ENGN,SAPPORO,HOKKAIDO 060,JAPAN
HOKKAIDO UNIV,FAC ENGN,DEPT ELECT ENGN,SAPPORO,HOKKAIDO 060,JAPAN
OHNO, H
[
1
]
机构
:
[1]
HOKKAIDO UNIV,FAC ENGN,DEPT ELECT ENGN,SAPPORO,HOKKAIDO 060,JAPAN
来源
:
JOURNAL OF ELECTRONIC MATERIALS
|
1988年
/ 17卷
/ 04期
关键词
:
D O I
:
暂无
中图分类号
:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号
:
0808 ;
0809 ;
摘要
:
引用
收藏
页码:S31 / S32
页数:2
相关论文
未找到相关数据
未找到相关数据