A 12-bit 1 MS/s SAR-ADC for multi-channel CdZnTe detectors

被引:0
|
作者
Liu Wei [1 ]
Wei Tingcun [1 ]
Li Bo [1 ]
Guo Panjie [1 ]
Hu Yongcai [1 ]
机构
[1] Northwestern Polytech Univ, Sch Comp Sci & Technol, Xian 710072, Shaanxi, Peoples R China
关键词
SAR; ADC; radiation-hardness; low power; CZT detectors;
D O I
10.1088/1674-4926/36/4/045007
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
This paper presents a low power, area-efficient and radiation-hardened 12-bit 1 MS/s successive approximation register (SAR) analog-to-digital converter (ADC) for multi-channel CdZnTe (CZT) detector applications. In order to improve the SAR-ADC's accuracy, a novel comparator is proposed in which the offset voltage is selfcalibrated and also a new architecture for the unit capacitor array is proposed to reduce the capacitance mismatches in the charge-redistribution DAC. The ability to radiation-harden the SAR-ADC is enhanced through circuit and layout design technologies. The prototype chip was fabricated using a TSMC 0.35 mu m 2P4M CMOS process. At a 3.3/5 V power supply and a sampling rate of 1 MS/s, the proposed SAR-ADC achieves a peak signal to noise and distortion ratio (SINAD) of 67.64 dB and consumes only 10 mW power. The core of the prototype chip occupies an active area of 1180 x 1080 mu m(2)
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页数:8
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