MEASUREMENT OF THE CURRENT TRANSIENT IN TA2O5 FILMS

被引：3
|
作者：
SUNDARAM, K
CHOI, WK
LING, CH
机构：
[1] Microelectronics Laboratory, Department of Electrical Engineering, National University of Singapore, Singapore, 0511
来源：
THIN SOLID FILMS | 1993年 / 230卷 / 02期
关键词：
D O I：
10.1016/0040-6090(93)90498-E
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Current vs. time (I-t) measurements were performed on Ta2O5-based devices. Charge build-up at the Ta2O5/SiO2 interface was used to explain the transient. The interfacial charge density was calculated from the I-t curve and the maximum was found to be 398 nC cm-2 and 317 nC cm-2 for Al/Ta2O5/Si and Al/Ta2O5/SiO2/Si capacitors respectively. The value for MTOS was comparable with the value obtained by quasi-static measurements.
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收藏
页码：95 / 98
页数：4
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