FORMATION OF EPITAXIAL PB(ZR, TI)O3 FILM BY CVD

被引：0
|
作者：
FUNAKUBO, H
IMASHITA, K
KIEDA, N
MIZUTANI, N
机构：
来源：
NIPPON SERAMIKKUSU KYOKAI GAKUJUTSU RONBUNSHI-JOURNAL OF THE CERAMIC SOCIETY OF JAPAN | 1991年 / 99卷 / 03期
关键词：
EPITAXIAL FILM; PZT; CVD; COLD-WALL TYPE APPARATUS;
D O I：
暂无
中图分类号：
TQ174 [陶瓷工业]; TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
Pb(x)(Zr(y), Ti1-y)O3 films were prepared by CVD using Pb(DPM)2, Zr(O-t-Bu)4, Ti(O.i-Pr)4, and O2 as starting materials. Metal alkoxide was selected for both Ti and Zr starting materials, which were effective for controlling Ti and Zr contents in the films. PZT films with the composition, x = ca. 1.0 and y = ca. 0.5, were grown reproducibly with almost complete epitaxy on (100) MgO substrates. Deposition rate of film was about 200-300 nm/min.
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页码：248 / 250
页数：3
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