CHARACTERISTICS OF ION-BEAM ASSISTED ETCHING OF GAAS USING FOCUSED ION-BEAM - DEPENDENCE ON GAS-PRESSURE

被引：10
作者：
OCHIAI, Y
GAMO, K
NAMBA, S
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1984年 / 23卷 / 06期
关键词：
D O I：
10.1143/JJAP.23.L400
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：L400 / L402
页数：3
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