MEMORY EFFECTS IN THE STRUCTURE SILICON SINGLE-CRYSTAL - FERROELECTRIC FILM

被引：8

作者：

TOLSTOUSOV, S

MUKHORTOV, V

DUDKEVICH, V

FESENKO, E

机构：

来源：

关键词：

D O I：

10.1080/07315178308200553

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：51 / 56

页数：6

共 11 条

[1]

JANDA KGP, 1980, FERROELECTRICS, V27, P161

[2]

MASANORI O, 1980, 8TH P INT VAC C TRIC, V1, P503

[3]

MUKHORTOV VM, 1981, ZH TEKH FIZ+, V51, P1524

[4]

MUKHORTOV VM, 1975, IAN SSSR NEORG MATER, V11, P2010

[5] THIN FERROELECTRIC-FILMS OF BATIO3 ON DOPED SILICON [J].

PARK, JK ;

GRANNEMANN, WW .

[6]

RZHANOV RV, 1976, PROPERTIES STRUCTURE, P35

[7] CHARACTERISTICS OF RF SPUTTERED BARIUM-TITANATE FILMS ON SILICON [J].

SALAMA, CAT ;

SICIUNAS, E .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1972, 9 (01) :91-&

[8]

SUGEBUCHE KK, 1975, J APPL PHYS, V46, P7

[9]

WU SY, 1979, J APPL PHYS, V50, P4314, DOI 10.1063/1.326415

[10]

WU SY, 1974, IEEE T ELECTRON DEV, VED21, P499