LOW-TEMPERATURE MOLECULAR-BEAM EPITAXY OF GALLIUM-ARSENIDE

被引：18
|
作者：
MISSOUS, M [1 ]
SINGER, KE [1 ]
机构：
[1] UNIV MANCHESTER,INST SCI & TECHNOL,CTR ELECTR MAT,MANCHESTER M60 1QD,LANCS,ENGLAND
来源：
APPLIED PHYSICS LETTERS | 1987年 / 50卷 / 11期
关键词：
D O I：
10.1063/1.98069
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：694 / 695
页数：2
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