EPITAXIAL-GROWTH OF 3C-SIC FILMS ON 4 INCH DIAM (100)SILICON-WAFERS BY ATMOSPHERIC-PRESSURE CHEMICAL-VAPOR-DEPOSITION

被引：200

作者：

ZORMAN, CA ^{[1
]}

FLEISCHMAN, AJ ^{[1
]}

DEWA, AS ^{[1
]}

MEHREGANY, M ^{[1
]}

JACOB, C ^{[1
]}

NISHINO, S ^{[1
]}

PIROUZ, P ^{[1
]}

机构：

[1] CASE WESTERN RESERVE UNIV,DEPT MAT SCI & ENGN,CLEVELAND,OH 44106

来源：

JOURNAL OF APPLIED PHYSICS | 1995年 / 78卷 / 08期

关键词：

D O I：

10.1063/1.359745

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Silicon carbide (SiC) films have been grown on 4 in. diam (100) silicon wafers by atmospheric pressure chemical vapor deposition, using propane, silane, acid hydrogen. X-ray photoelectron spectroscopy data confirm that the films are stoichiometric Sis, with no major impurities. X-ray diffraction and transmission electron microscopy (TEM) data indicate that the films are single-crystalline cubic polytype (3C) across the 4 in. substrates. With the exception of slip lines near the edge of the wafers, the films appear featureless when observed optically. The nitrogen concentration, as determined by secondary ion mass spectroscopy, is 4x10(18) cm(3). Cross-sectional TEM images show a fairly rough, void-free interface. (C) 1995 American Institute of Physics.

引用

页码：5136 / 5138

页数：3

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