BORON-DIFFUSION IN SIO2 BASED DIELECTRIC THIN-LAYERS

被引：8

作者：

NEDELEC, S

MATHIOT, D

GAUNEAU, M

STRABONI, A

机构：

[1] SGS THOMSON MICROELECTR,F-38921 CROLLES,FRANCE

[2] FRANCE TELECOM,LAB,CNET,F-22301 LANNION,FRANCE

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1995年 / 187卷

关键词：

D O I：

10.1016/0022-3093(95)00121-2

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Boron diffusivity has been quantified in pure and plasma nitrided thin oxide films. For this study, p + polysilicon metal-oxide-semiconductor (MOS) structures with pure or nitrided oxide gates have been used. Boron diffusivity has been determined by fitting in the substrate the experimental boron profile with a calculated one. The diffusivity in pure oxide has been obtained in the 900-1200 degrees C temperature range, and the influence of nitridation has been quantified. As expected, a lower diffusivity in nitrided oxide has been obtained. This decrease is found to be mainly due to a lower pre-exponential term in the Arrhenius law. A linear decrease of the activation energy with the nitrogen content has been observed and an explanation has been given for this behaviour.

引用

页码：106 / 111

页数：6

共 7 条

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ANTONIADIS DA, 1978, J ELECTROCHEM SOC, V124, P813

[2] QUANTITATIVE AUGER SPUTTER DEPTH PROFILING OF VERY THIN NITRIDED OXIDE [J].