HIGH-POWER 0.98-MU-M STRAINED-LAYER QUANTUM-WELL LASERS WITH INGAP CLADDING

被引：2
作者：
IJICHI, T
OHKUBO, M
IKETANI, A
KIKUTA, T
机构：
[1] The Furukawa Electric Co., Ltd., Yokohama, 220, 2—4—3 Okano, Nishi-ku
来源：
MICROWAVE AND OPTICAL TECHNOLOGY LETTERS | 1994年 / 7卷 / 03期
关键词：
STRAINED-LAYER QUANTUM-WELL LASER; 0.98-MU-M LASER; RIDGE WAVE-GUIDE LASER; HIGH-POWER LASER; OPTICAL-FIBER AMPLIFIER;
D O I：
10.1002/mop.4650070313
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Recent progress on InGaAs/GaAs strained-layer quantum-well lasers using InGaP cladding are reported. The 0.98-, 1.02-, and 1.06-mu m polyimide buried ridge waveguide lasers fabricated by using selective chemical etching are applicable to high-power use. Further, employing InGaAsP layers lattice matched to GaAs enables the realization of GRIN-SCH lasers, which is expected to be a technique to improve the laser characteristics. (C) 1994 John Wiley and Sons. Inc.
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页码：139 / 143
页数：5
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