MAJORITY-CARRIER MOBILITY IN P-TYPE HG1-XCDXTE

被引:17
|
作者
MEYER, JR
BARTOLI, FJ
HOFFMAN, CA
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A | 1987年 / 5卷 / 05期
关键词
D O I
10.1116/1.574210
中图分类号
TB3 [工程材料学];
学科分类号
0805 ; 080502 ;
摘要
引用
收藏
页码:3035 / 3039
页数:5
相关论文
共 50 条
  • [1] ELECTRON-MOBILITY IN P-TYPE EPITAXIALLY GROWN HG1-XCDXTE
    GORDON, NT
    BARTON, S
    CAPPER, P
    JONES, CL
    METCALFE, N
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (01) : S221 - S224
  • [2] CARRIER LIFETIME IN ELECTRON-IRRADIATED P-TYPE HG1-XCDXTE CRYSTALS
    VOITSEKHOVSKII, AV
    KOKHANENKO, AP
    LILENKO, YV
    PETROV, AS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (04): : 386 - 388
  • [3] CARRIER FREEZE-OUT AND ACCEPTOR ENERGIES IN P-TYPE HG1-XCDXTE
    ELLIOTT, CT
    FOYT, AG
    MELNGAIL.I
    HARMAN, TC
    JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1972, 33 (08) : 1527 - &
  • [4] Investigation of the light hole in p-type Hg1-xCdxTe
    Jiang, Chunping
    Gui, Yongsheng
    Zheng, Guozhen
    Ma, Zhixun
    Wang, Shanli
    He, Li
    Chu, Junhao
    Wuli Xuebao/Acta Physica Sinica, 2000, 49 (05): : 959 - 964
  • [5] Investigation of the light hole in p-type Hg1-xCdxTe
    Jiang, CP
    Gui, YS
    Zheng, GZ
    Ma, ZX
    Wang, SL
    He, L
    Chu, JH
    ACTA PHYSICA SINICA, 2000, 49 (05) : 959 - 964
  • [6] ANOMALOUS ELECTRICAL PROPERTIES OF P-TYPE HG1-XCDXTE
    SCOTT, W
    HAGER, RJ
    JOURNAL OF APPLIED PHYSICS, 1971, 42 (02) : 803 - &
  • [7] INFLUENCE OF DEEP LEVEL INTRINSIC DEFECTS ON THE CARRIER TRANSPORT IN P-TYPE HG1-XCDXTE
    HOERSTEL, W
    KLIMAKOW, A
    KRAMER, R
    JOURNAL OF CRYSTAL GROWTH, 1990, 101 (1-4) : 854 - 858
  • [8] P-type as-doping of Hg1-xCdxTe grown by MOMBE
    Zhang, LH
    Pearson, SD
    Tong, W
    Wagner, BK
    Benson, JD
    Summers, CJ
    JOURNAL OF ELECTRONIC MATERIALS, 1998, 27 (06) : 600 - 604
  • [9] On the kinetics of the activation of arsenic as a p-type dopant in Hg1-xCdxTe
    Schaake, HF
    JOURNAL OF ELECTRONIC MATERIALS, 2001, 30 (06) : 789 - 793
  • [10] DEFECT RELATED ABSORPTION IN P-TYPE HG1-XCDXTE ALLOYS
    HUANG, CH
    YU, ZZ
    TANG, DY
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1990, 121 (01): : 273 - 280