ELECTRONIC-PROPERTIES OF VACANCY-INDUCED STRUCTURES IN ALAS/GAAS SUPERLATTICES

被引：8

作者：

WANG, EG ^{[1
]}

ZHANG, LY ^{[1
]}

WANG, HY ^{[1
]}

机构：

[1] BEIJING UNIV,DEPT PHYS,BEIJING,PEOPLES R CHINA

来源：

PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1989年 / 155卷 / 02期

关键词：

D O I：

10.1002/pssb.2221550229

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

页码：587 / 595

页数：9

共 50 条

[21] PHONON PROPERTIES OF (311) GAAS/ALAS SUPERLATTICES [J].

POPOVIC, ZV ;

RICHTER, E ;

SPITZER, J ;

CARDONA, M ;

SHEILDS, AJ ;

NOTZEL, R ;

PLOOG, K .

PHYSICAL REVIEW B, 1994, 49 (11) :7577-7583

[22] Valence band structures of GaAs/AlAs lateral superlattices [J].

National Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083, China .

J Phys Condens Matter, 13 (2809-2820)

[23] Valence band structures of GaAs/AlAs lateral superlattices [J].

Li, SS ;

Zhu, BF ;

Xia, JB .

JOURNAL OF PHYSICS-CONDENSED MATTER, 1999, 11 (13) :2809-2820

[24] ELECTRONIC-PROPERTIES OF SI ATOMIC-PLANAR-DOPED GAAS/ALAS QUANTUM-WELL STRUCTURES GROWN BY MBE [J].

SASA, S ;

KONDO, K ;

ISHIKAWA, H ;

FUJII, T ;

MUTO, S ;

HIYAMIZU, S .

SURFACE SCIENCE, 1986, 174 (1-3) :433-438

[25] STRUCTURAL AND ELECTRONIC-PROPERTIES OF NONPERIODIC SUPERLATTICES [J].

MERLIN, R .

IEEE JOURNAL OF QUANTUM ELECTRONICS, 1988, 24 (08) :1791-1798

[26] CALCULATION AND INTERPRETATION OF THE ELECTRONIC-PROPERTIES OF SUPERLATTICES [J].

POLATOGLOU, HM ;

KANELLIS, G ;

THEODOROU, G .

PHYSICAL REVIEW B, 1989, 39 (12) :8483-8487

[27] Photoluminescence properties of AlAs/GaAs disordered superlattices with fixed GaAs or AlAs layer thickness [J].

Uno, K ;

Noda, S ;

Sasaki, A .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 35 (1-3) :406-409

[28] ON THE ELECTRONIC-PROPERTIES OF ORDERED VACANCY COMPOUNDS [J].

MACKINNON, A .

JAPANESE JOURNAL OF APPLIED PHYSICS, 1980, 19 (03) :157-159

[29] Modifying the electronic properties of GaAs/AlAs superlattices with low-density nitrogen doping [J].

Spasov, S. ;

Allison, G. ;

Patane, A. ;

Eaves, L. ;

Hopkinson, M. ;

Airey, R. .

JOURNAL OF APPLIED PHYSICS, 2006, 100 (06)

[30] Modifying the electronic properties of GaAs/AlAs superlattices with low-density nitrogen doping [J].

Spasov, S. ;

Allison, G. ;

Patanè, A. ;

Eaves, L. ;

Hopkinson, M. ;

Airey, R. .

Journal of Applied Physics, 2006, 100 (06)

← 1 2 3 4 5 →