LOW-THRESHOLD GRIN-SCH ALGAINAS 1.55-MU-M QUANTUM-WELL BURIED RIDGE STRUCTURE LASERS GROWN BY MOLECULAR-BEAM EPITAXY

被引：20
作者：
KAZMIERSKI, C
BLEZ, M
QUILLEC, M
ALLOVON, M
SERMAGE, B
机构：
[1] CNET, 196, avenue Henri Ravera, 92220, Bagneux
来源：
ELECTRONICS LETTERS | 1990年 / 26卷 / 13期
关键词：
materials; Semiconductor devices; Semiconductor lasers;
D O I：
10.1049/el:19900581
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Two-step MBE/MOVPE epitaxy buried ridge stripe GRIN-SCH quantum well lasers having MBE active structure consisting of GalnAs quantum wells and an AIGalnAs continuously graded confinement region have been fabricated and characterised. Devices operating at 155 μm wavelength with a low CW threshold current of 18-7mA have been demonstrated. This figure is the best result obtained in the AIGalnAs system. A study of the intrinsic optical response of the active layer showed a very fast decay of the resonance oscillations. A good figure of the optical bandwidth move-out rate 3-9 GHz mW1/2 has been observed. © 1990, The Institution of Electrical Engineers. All rights reserved.
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页码：889 / 891
页数：3
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