SIZE EFFECT IN PARABOLIC GAAS/ALXGA1-XAS QUANTUM-WELLS

被引：11

作者：

WALUKIEWICZ, W ^{[1
]}

HOPKINS, PF ^{[1
]}

SUNDARAM, M ^{[1
]}

GOSSARD, AC ^{[1
]}

机构：

[1] UNIV CALIF SANTA BARBARA,DEPT MAT ELECT & COMP ENGN,SANTA BARBARA,CA 93106

来源：

PHYSICAL REVIEW B | 1991年 / 44卷 / 19期

关键词：

D O I：

10.1103/PhysRevB.44.10909

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report the results of experimental and theoretical studies of the electron mobility in remotely doped, quasi-three-dimensional GaAs/AlxGa1-xAs parabolic wells. We show that the electron mobility in such structures is strongly reduced by a size effect due to nonspecular scattering of electrons from rough walls confining the electron gas. The roughness of the walls results from random fluctuations of the remote-ionized-impurity concentration and/or the alloy composition. Incorporation of the size effect allows for a quantitative description of the electron mobility in these parabolic wells.

引用

页码：10909 / 10912

页数：4

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