ELECTRICAL-PROPERTIES OF HALOGEN LAMP RECRYSTALLIZED SILICON FILMS ON SIO2

被引:8
作者
VU, DP
CHANTRE, A
MINGAM, H
VINCENT, G
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D O I
10.1063/1.334157
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O59 [应用物理学];
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页码:1682 / 1686
页数:5
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共 23 条
[1]   ELECTRON-MOBILITY EMPIRICALLY RELATED TO PHOSPHORUS CONCENTRATION IN SILICON [J].
BACCARANI, G ;
OSTOJA, P .
SOLID-STATE ELECTRONICS, 1975, 18 (06) :579-580
[2]  
Chantre A., 1982, Laser and Electron Beam Interactions with Solids. Proceedings of the Materials Research Society Annual Meeting, P325
[3]   VACANCY-DIFFUSION MODEL FOR QUENCHED-IN E-CENTERS IN CW-LASER ANNEALED VIRGIN SILICON [J].
CHANTRE, A ;
KECHOUANE, M ;
BOIS, D .
PHYSICA B & C, 1983, 116 (1-3) :547-552
[4]  
CHANTRE A, 1983, DEFECTS SEMICONDUCTO
[5]   GROWTH OF LARGE AREAS OF GRAIN BOUNDARY-FREE SILICON-ON-INSULATOR [J].
COLINGE, JP ;
BENSAHEL, D ;
ALAMOME, M ;
HAOND, M ;
PFISTER, JC .
ELECTRONICS LETTERS, 1983, 19 (23) :985-986
[6]   USE OF SELECTIVE ANNEALING FOR GROWING VERY LARGE GRAIN SILICON ON INSULATOR FILMS [J].
COLINGE, JP ;
DEMOULIN, E ;
BENSAHEL, D ;
AUVERT, G .
APPLIED PHYSICS LETTERS, 1982, 41 (04) :346-347
[7]   TECHNIQUES FOR PRODUCING DEFECT-FREE SOI BY DUAL ELECTRON-BEAM HEATING OF DEPOSITED POLYSILICON [J].
DAVIS, JR ;
MCMAHON, RA ;
AHMED, H .
JOURNAL DE PHYSIQUE, 1983, 44 (NC-5) :337-341
[8]   MICROANALYSIS OF SINGLE-CRYSTAL SI RECRYSTALLIZED USING HALOGEN LAMPS [J].
HAOND, M ;
VU, DP ;
BENSAHEL, D ;
DUPUY, M .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) :3892-3896
[9]  
Johnson N. M., 1983, Laser-Solid Interactions and Transient Thermal Processing of Materials, P491
[10]  
Kamgar A., 1982, Materials Letters, V1, P91, DOI 10.1016/0167-577X(82)90016-7