EFFECT OF SUBSTRATE ANNEALING AND V-III FLUX RATIO ON THE MOLECULAR-BEAM EPITAXIAL-GROWTH OF ALGAAS-GAAS SINGLE QUANTUM WELLS

被引：17

作者：

MAKI, PA ^{[1
]}

PALMATEER, SC ^{[1
]}

WICKS, GW ^{[1
]}

EASTMAN, LF ^{[1
]}

CALAWA, AR ^{[1
]}

机构：

[1] MIT,LINCOLN LAB,LEXINGTON,MA 02173

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1983年 / 12卷 / 06期

关键词：

D O I：

10.1007/BF02654974

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1051 / 1063

页数：13

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