X-RAY DETERMINATION OF THE SURFACE COMPRESSION FORCE IN THE ION-DOPED LAYER IN SILICON

被引：3
|
作者：
PETRASHEN, PV [1 ]
SHULPINA, IL [1 ]
机构：
[1] AF IOFFE PHYS TECH INST,LENINGRAD 194021,USSR
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1983年 / 78卷 / 02期
关键词：
D O I：
10.1002/pssa.2210780250
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：K105 / &
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