PROCESS DESIGN USING TWO-DIMENSIONAL PROCESS AND DEVICE SIMULATORS

被引:42
作者
CHIN, D [1 ]
KUMP, MR [1 ]
LEE, HG [1 ]
DUTTON, RW [1 ]
机构
[1] HEWLETT PACKARD CO,CUPERTINO IC OPERAT,CUPERTINO,CA 95014
关键词
D O I
10.1109/T-ED.1982.20704
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:336 / 340
页数:5
相关论文
共 18 条
[1]  
ANTONIADIS DA, 1978, SEL78020 STANF EL LA
[2]  
Du Fort E.C., 1953, MATH TABLES OTHER AI, V7, P135, DOI [DOI 10.2307/2002754, 10.1090/S0025-5718-1953-0059077-7]
[3]   THEORETICAL CONSIDERATIONS ON LATERAL SPREAD OF IMPLANTED IONS [J].
FURUKAWA, S ;
ISHIWARA, H ;
MATSUMURA, H .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1972, 11 (02) :134-+
[4]   NONPLANAR VLSI DEVICE ANALYSIS USING THE SOLUTION OF POISSON EQUATION [J].
GREENFIELD, JA ;
DUTTON, RW .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1520-1532
[5]   INTERACTIONS IN SEQUENTIAL DIFFUSION PROCESSES IN SEMICONDUCTORS [J].
HU, SM ;
SCHMIDT, S .
JOURNAL OF APPLIED PHYSICS, 1968, 39 (09) :4272-+
[6]   ON REDISTRIBUTION OF BORON IN DIFFUSED LAYER DURING THERMAL OXIDATION [J].
HUANG, JST ;
WELLIVER, LC .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (12) :1577-&
[7]  
Iwai H., 1980, International Electron Devices Meeting. Technical Digest, P728
[8]   REDISTRIBUTION OF BORON DURING THERMAL-OXIDATION OF SILICON [J].
LEE, HG ;
DUTTON, RW ;
ANTONIADIS, DA .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (11) :2001-2007
[9]  
LEE HG, 1980, THESIS STANFORD U ST
[10]   TRANSIENT ANALYSIS OF MOS-TRANSISTORS [J].
OH, SY ;
WARD, DE ;
DUTTON, RW .
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1980, 27 (08) :1571-1578