Dislocation configurations in low lattice-mismatched Si/SiGe/(001)Si heterostructures

被引：0
|
作者：
Xin, Y
Brown, PD
Humphreys, CJ
机构：
来源：
ELECTRON MICROSCOPY AND ANALYSIS 1995 | 1995年 / 147卷
关键词：
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Dislocation configurations in as-grown and annealed Si/Si0.88Ge0.12/(001)Si heterostructures were analysed. For both cases, dislocations were observed in the Si substrate and Si cap, while no or few dislocations were found in the SiGe layer. LACBED measurements indicated some dislocations parallel to the interface but deep in the substrate to have the opposite Burgers vectors to those required to relieve misfit strain at the interface.
引用
收藏
页码：87 / 90
页数：4
相关论文
共 50 条
  • [41] SELECTIVE ETCHING OF SIGE ON SIGE/SI HETEROSTRUCTURES
    CHANG, GK
    CARNS, TK
    RHEE, SS
    WANG, KL
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1991, 138 (01) : 202 - 204
  • [42] A formation of three-dimensional misfit dislocation networks in SiGe/Si and SiGe/Ge heterostructures
    Vdovin, VI
    MICROSCOPY OF SEMICONDUCTING MATERIALS 1995, 1995, 146 : 187 - 190
  • [43] Diffusion of phosphorus in strained Si/SiGe/Si heterostructures
    Kuznetsov, AY
    Christensen, JS
    Linnarsson, MK
    Svensson, BG
    Radamson, HH
    Grahn, J
    Landgren, G
    SI FRONT-END PROCESSING-PHYSICS AND TECHNOLOGY OF DOPANT-DEFECT INTERACTIONS, 1999, 568 : 271 - 276
  • [44] Surface dynamics in the presence of lattice stress: SiGe growth on Si(001)
    Lagally, MG
    ABSTRACTS OF PAPERS OF THE AMERICAN CHEMICAL SOCIETY, 1997, 213 : 282 - PHYS
  • [45] Photoelastic waveguides in SiGe/Si heterostructures and bulk Si
    Lea, E
    Weiss, BL
    Rho, H
    Jackson, HE
    MATERIALS AND DEVICES FOR SILICON-BASED OPTOELECTRONICS, 1998, 486 : 95 - 100
  • [46] Formation of nickel silicide and germanosilicide layers on Si(001), relaxed SiGe/Si(001), and strained Si/relaxed SiGe/Si(001) and effect of postthermal annealing
    Ko, J. H.
    Jang, C. H.
    Kim, S. H.
    Song, Y. -J.
    Lee, N. E.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2006, 24 (04): : 1468 - 1473
  • [47] Shape Evolution of Highly Lattice-Mismatched InN/InGaN Nanowire Heterostructures
    Yan, Lifan
    Hazari, Arnab
    Bhattacharya, Pallab
    Millunchick, Joanna M.
    JOURNAL OF ELECTRONIC MATERIALS, 2018, 47 (02) : 966 - 972
  • [48] Exciton condensation in the compressively strained SiGe layers of Si/SiGe/Si heterostructures
    Burbaev, T. M.
    Bagaev, V. S.
    Bobrik, E. A.
    Kurbatov, V. A.
    Novikov, A. V.
    Rzaev, M. M.
    Sibeldin, N. N.
    Schaeffler, F.
    Tsvetkov, V. A.
    Tarakanov, A. G.
    Zaitsev, V. V.
    THIN SOLID FILMS, 2008, 517 (01) : 55 - 56
  • [49] Interplay of dislocation network and island arrangement in SiGe films grown on Si(001)
    Teichert, C
    Hofer, C
    Lyutovich, K
    Bauer, M
    Kasper, E
    THIN SOLID FILMS, 2000, 380 (1-2) : 25 - 28
  • [50] Dislocation structure and photoluminescence of partially relaxed SiGe layers on Si(001) substrates
    Steinman, EA
    Vdovin, VI
    Yugova, TG
    Avrutin, VS
    Izyumskaya, NF
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1999, 14 (06) : 582 - 588
12345