GROWTH OVER NONPLANAR SUBSTRATES BY ORGANOMETALLIC MOLECULAR-BEAM EPITAXY

被引：6
|
作者：
TAMARGO, MC
QUINN, WE
HWANG, DM
CHEN, CY
KAPON, E
SCHIAVONE, LM
BRASIL, MJSP
NAHORY, RE
机构：
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1992年 / 10卷 / 02期
关键词：
D O I：
10.1116/1.586107
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We present the growth habits of GaAs and InGaAs quantum wells grown by organometallic molecular-beam epitaxy (OM-MBE) on (100) GaAs substrates with micron-range corrugations aligned along the [011BAR] direction. The growth habits resemble those obtained by molecular-beam epitaxy, but with several obvious differences, which are discussed on the basis of their different growth mechanisms. These differences reduce the importance of the geometric factors for OM-MBE which dominate in MBE. We observe lateral compositional variations in the InGaAs quantum well. The patterned samples exhibit enhanced luminescence efficiency compared to reference flat samples.
引用
收藏
页码：982 / 985
页数：4
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