SURFACE-COMPOSITION OF SIC AFTER ION-BOMBARDMENT, ANNEALING, AND EXPOSURE TO OXYGEN

被引：27

作者：

JORGENSEN, B ^{[1
]}

MORGEN, P ^{[1
]}

机构：

[1] ODENSE UNIV,INST FYS,CAMPUSVEJ 55,DK-5230 ODENSE M,DENMARK

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1986年 / 4卷 / 03期

关键词：

D O I：

10.1116/1.573959

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1701 / 1704

页数：4

共 29 条

[1] CHEMICALLY-FORMED BUFFER LAYERS FOR GROWTH OF CUBIC SILICON-CARBIDE ON SILICON SINGLE-CRYSTALS [J].

ADDAMIANO, A ;

KLEIN, PH .

JOURNAL OF CRYSTAL GROWTH, 1984, 70 (1-2) :291-294

[2] BUFFER-LAYER TECHNIQUE FOR THE GROWTH OF SINGLE-CRYSTAL SIC ON SI [J].

ADDAMIANO, A ;

SPRAGUE, JA .

APPLIED PHYSICS LETTERS, 1984, 44 (05) :525-527

[3] STUDIES OF SIC FORMATION ON SI (100) BY CHEMICAL VAPOR-DEPOSITION [J].

BOZSO, F ;

YATES, JT ;

CHOYKE, WJ ;

MUEHLHOFF, L .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2771-2778

[4]

BROOK R, 1984, NEW SCI, V101, P13

[5] UTILITY OF BREMSSTRAHLUNG-INDUCED AUGER PEAKS [J].

CASTLE, JE ;

WEST, RH .

JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1979, 16 (03) :195-197

[6]

DAVIS LE, 1976, HDB AUGER ELECTRON S

[7] THERMAL-OXIDATION OF 3C SILICON-CARBIDE SINGLE-CRYSTAL LAYERS ON SILICON [J].

FUNG, CD ;

KOPANSKI, JJ .

APPLIED PHYSICS LETTERS, 1984, 45 (07) :757-759

[8] SURFACE-ANALYSIS OF DIAMONDLIKE CARBON-FILMS [J].

GREEN, AK ;

REHN, V .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1983, 1 (04) :1877-1879

[9] NEW TYPES OF HIGH-EFFICIENCY SOLAR-CELLS BASED ON A-SI [J].

HAMAKAWA, Y ;

FUJIMOTO, K ;

OKUDA, K ;

KASHIMA, Y ;

NONOMURA, S ;

OKAMOTO, H .

APPLIED PHYSICS LETTERS, 1983, 43 (07) :644-646

[10] VIBRATIONAL STUDY OF THE INITIAL-STAGES OF THE OXIDATION OF SI(111) AND SI(100) SURFACES [J].

IBACH, H ;

BRUCHMANN, HD ;

WAGNER, H .

APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 29 (03) :113-124

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