SURFACE CHEMICAL-SHIFTS AND PHOTOELECTRON DIFFRACTION IN COSI2

被引：40
作者：
LECKEY, R
RILEY, JD
JOHNSON, RL
LEY, L
DITCHEK, B
机构：
[1] MAX PLANCK INST FESTKORPERFORSCH,D-7000 STUTTGART 80,FED REP GER
[2] GTE LABS INC,WALTHAM,MA 02254
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS | 1988年 / 6卷 / 01期
关键词：
D O I：
10.1116/1.574970
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
引用
收藏
页码：63 / 69
页数：7
相关论文
共 35 条
[1]   CORE-LEVEL BINDING-ENERGY SHIFTS DUE TO RECONSTRUCTION ON THE SI(111) 2X1 SURFACE [J].
BRENNAN, S ;
STOHR, J ;
JAEGER, R ;
ROWE, JE .
PHYSICAL REVIEW LETTERS, 1980, 45 (17) :1414-1418
[2]   OXYGEN INTERACTION WITH COSI(100) AND COSI2(100) SURFACES [J].
CASTRO, G ;
HULSE, JE ;
KUPPERS, J ;
GONZALEZELIPE, AR .
SURFACE SCIENCE, 1982, 117 (1-3) :621-628
[3]   SPUTTERING OF COSI(100) AND COSI2(100) SINGLE-CRYSTAL SURFACES [J].
CASTRO, GR ;
KUPPERS, J ;
IVASHCHENKO, Y .
APPLICATIONS OF SURFACE SCIENCE, 1983, 16 (3-4) :453-462
[4]  
CHAMBERS SA, 1986, PHYS REV, V34, P93
[5]   STRUCTURE AND NUCLEATION MECHANISM OF NICKEL SILICIDE ON SI(111) DERIVED FROM SURFACE EXTENDED-X-RAY-ABSORPTION FINE-STRUCTURE [J].
COMIN, F ;
ROWE, JE ;
CITRIN, PH .
PHYSICAL REVIEW LETTERS, 1983, 51 (26) :2402-2405
[6]  
COMIN F, 1985, STANFORD SYNCHROTRON, P115
[7]   STRUCTURAL AND ELECTRONIC-PROPERTIES OF COSI2 EPITAXIALLY GROWN ON SI(111) [J].
DERRIEN, J .
SURFACE SCIENCE, 1986, 168 (1-3) :171-183
[8]   MOLECULAR-BEAM EPITAXIAL-GROWTH OF SI ON COSI2 SUBSTRATES [J].
DITCHEK, BM ;
SALERNO, JP ;
GORMLEY, JV .
APPLIED PHYSICS LETTERS, 1985, 47 (11) :1200-1202
[9]  
FISCHER AEM, 1986, HASYLAB DESY1985 ANN, P281
[10]   STRUCTURE DETERMINATION OF THE COSI2-SI(111) INTERFACE BY X-RAY STANDING-WAVE ANALYSIS [J].
FISCHER, AEMJ ;
VLIEG, E ;
VANDERVEEN, JF ;
CLAUSNITZER, M ;
MATERLIK, G .
PHYSICAL REVIEW B, 1987, 36 (09) :4769-4773
1234