HIGH-DETECTIVITY (GREATER-THAN-1X1010 CM-SQUARE-ROOT-HZ W), INASSB STRAINED-LAYER SUPERLATTICE, PHOTOVOLTAIC INFRARED DETECTOR

被引：49
作者：
KURTZ, SR
DAWSON, LR
ZIPPERIAN, TE
WHALEY, RD
机构：
[1] Sandia National Laboratories, Albuquerque, NM
来源：
IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 01期
关键词：
D O I：
10.1109/55.46929
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-detectivity infrared photodiode was constructed using an InAso.15Sbo.85/InSb strained-layer superlattice (SLS). The surface passivated device exhibited detectivities ≥1 × 1010 cm √Hz/W at wavelengths ≥10 μm. This device demonstrates the feasibility of a long-wavelength, photovoltaic infrared detector technology based on InAsSb SLS’s. © 1990 IEEE
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页码：54 / 56
页数：3
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