POSSIBILITIES OF X-RAY INTERFERENCE DIFFRACTOMETRY FOR THE INVESTIGATION OF ION-DOPED LAYERS

被引：9
|
作者：
ARISTOV, VV [1 ]
MORDKOVICH, VN [1 ]
NIKULIN, AY [1 ]
SNIGIREV, AA [1 ]
WINTER, U [1 ]
EROKHIN, YN [1 ]
ZAUMSEIL, P [1 ]
机构：
[1] ACAD SCI GDR,INST SEMICONDUCT PHYS,O-1200 FRANKFURT,GERMANY
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1990年 / 120卷 / 01期
关键词：
D O I：
10.1002/pssa.2211200127
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
[No abstract available]
引用
收藏
页码：K1 / K5
页数：5
相关论文
共 50 条
  • [1] X-Ray Diffractometry of Thin Layers - Possibilities and Problems
    Zucha, Vladimir
    Jackuliak, Quido
    ADVANCES IN ELECTRICAL AND ELECTRONIC ENGINEERING, 2005, 4 (02) : 55 - 57
  • [2] X-RAY DETERMINATION OF THE SURFACE COMPRESSION FORCE IN THE ION-DOPED LAYER IN SILICON
    PETRASHEN, PV
    SHULPINA, IL
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 78 (02): : K105 - &
  • [3] Three-crystal x-ray diffractometry for ion implanted layers analysis (a review)
    Shcherbachev, K.D.
    Kuripyatnik, A.V.
    Bublik, V.T.
    Zavodskaya Laboratoriya. Diagnostika Materialov, 2003, 69 (06): : 23 - 32
  • [4] POSSIBILITIES OF X-RAY INTERFERENCE DIFFRACTOMETRY FOR THE RECONSTRUCTION OF 2-DIMENSIONAL LATTICE DEFORMATION PROFILES IN CRYSTALS
    ARISTOV, VV
    GOUREEV, TE
    NIKULIN, AY
    PETRASHEN, PV
    SNIGIREV, AA
    JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1993, 26 (4A) : A29 - A31
  • [5] POSSIBILITIES OF X-RAY INTERFERENCE DIFFRACTOMETRY FOR THE RECONSTRUCTION OF 2-DIMENSIONAL LATTICE DEFORMATION PROFILES IN CRYSTALS
    ARISTOV, VV
    GOUREEV, TE
    NIKULIN, AY
    PETRASHEN, PV
    SNIGIREV, AA
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1992, 7 (08) : 1109 - 1112
  • [6] STRAIN PROFILES IN ION-DOPED SILICON OBTAINED FROM X-RAY ROCKING CURVES
    KYUTT, RN
    PETRASHEN, PV
    SOROKIN, LM
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1980, 60 (02): : 381 - 389
  • [7] The investigation of porous silicon by the methods of X-ray diffractometry
    Ratnikov, V.V.
    Astrova, E.V.
    Vitman, R.F.
    Lebedev, A.A.
    Remenyuk, A.D.
    Rud', Yu.V.
    Izvestiya Vysshikh Uchebnykh Zavedenii, Tsvetnaya Metallurgiya, (05): : 70 - 78
  • [8] X-ray diffractometry investigation of the hexagonal phase of GaP
    Kyutt, R.N.
    Elyukhin, V.A.
    Khapachev, Yu.P.
    Poverkhnost Rentgenovskie Sinkhronnye i Nejtronnye Issledovaniya, 2001, (06): : 12 - 16
  • [9] X-ray diffractometry applied to ancient metals investigation
    Kadar, M
    Ileana, I
    Popa, M
    ADVANCED TOPICS IN OPTOELECTRONICS, MICROELECTRONICS, AND NANOTECHNOLOGIES, 2002, 5227 : 86 - 90
  • [10] INVESTIGATION OF ION-IMPLANTED SURFACE-LAYERS OF ALUMINUM SINGLE-CRYSTALS BY X-RAY DOUBLE CRYSTAL DIFFRACTOMETRY
    PANGBORN, RN
    VOLD, CL
    GRABOWSKI, KS
    JOURNAL OF METALS, 1984, 36 (12): : 103 - 103
12345