STRUCTURAL AND MORPHOLOGICAL PECULIARITIES OF EPITAXIAL LAYERS AND MONOCRYSTALS OF SILICON-CARBIDE HIGHLY DOPED BY NITROGEN

被引：18
作者：
LILOV, SK
TAIROV, YM
TSVETKOV, VF
CHERNOV, MA
机构：
[1] UNIV SOFIA,FAC PHYS,DEPT SEMICOND,SOFIA,BULGARIA
[2] VI LENIN ELECT ENGN INST,SEMICOND & DIELECT DEPT,LENINGRAD,USSR
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1976年 / 37卷 / 01期
关键词：
D O I：
10.1002/pssa.2210370119
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：143 / 150
页数：8
相关论文
共 28 条
[11]  
GORINA SN, 1969, DEFEKTY KRISTALLAKH
[12]  
JAGODZINSKI H, 1954, NEUES JAHRB MINERAL, V3, P49
[13]  
JAGODZINSKY H, 1954, ACTA CRYST, V7, P30
[14]  
KNIPPENBERG WF, 1968, OCT P INT C SIL CARB, P45
[15]  
KNIPPENBERG WF, 1968, OCT P C SIL CARB, P33
[16]  
Knippenberg WF., 1963, PHILIPS RES REP, V18, P161
[17]   DIRECT TRANSFORMATION FROM 2H TO 6H STRUCTURE IN SINGLE-CRYSTAL SILICON CARBIDE [J].
KRISHNA, P ;
MARSHALL, RC .
JOURNAL OF CRYSTAL GROWTH, 1971, 11 (02) :147-&
[18]   STRUCTURE, PERFECTION AND ANNEALING BEHAVIOUR OF SIC NEEDLES GROWN BY A VLS MECHANISM [J].
KRISHNA, P ;
MARSHALL, RC .
JOURNAL OF CRYSTAL GROWTH, 1971, 9 (01) :319-&
[19]   DISCOVERY OF A 2H-3C SOLID STATE TRANSFORMATION IN SILICON CARBIDE SINGLE CRYSTALS [J].
KRISHNA, P ;
MARSHALL, RC ;
RYAN, CE .
JOURNAL OF CRYSTAL GROWTH, 1971, 8 (01) :129-&
[20]  
LELY IA, 1954, BER DTSCH KERAM GES, V32, P229
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