STRUCTURAL AND MORPHOLOGICAL PECULIARITIES OF EPITAXIAL LAYERS AND MONOCRYSTALS OF SILICON-CARBIDE HIGHLY DOPED BY NITROGEN

被引：18
作者：
LILOV, SK
TAIROV, YM
TSVETKOV, VF
CHERNOV, MA
机构：
[1] UNIV SOFIA,FAC PHYS,DEPT SEMICOND,SOFIA,BULGARIA
[2] VI LENIN ELECT ENGN INST,SEMICOND & DIELECT DEPT,LENINGRAD,USSR
来源：
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1976年 / 37卷 / 01期
关键词：
D O I：
10.1002/pssa.2210370119
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：143 / 150
页数：8
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