HIGH-RESOLUTION ELECTRON-MICROSCOPY OBSERVATIONS OF PRECIPITATES IN P-SUPERSATURATED SILICON

被引：12

作者：

ARMIGLIATO, A ^{[1
]}

WERNER, P ^{[1
]}

机构：

[1] AKAD WISSENSCH DDR,INST FESTKOPERPHYS & ELEKTRONENMIKROSKOPIE,DDR-4020 HALLE SAALE,GER DEM REP

来源：

ULTRAMICROSCOPY | 1984年 / 15卷 / 1-2期

关键词：

D O I：

10.1016/0304-3991(84)90075-5

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

24

引用

收藏

页码：61 / 69

页数：9

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[21] PREDEPOSITION IN SILICON AS AFFECTED BY FORMATION OF ORTHORHOMBIC SIP AND CUBIC SIO-2.P-2O-5 AT PSG-SI INTERFACE
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[24] DEFECTS IN IRRADIATED SILICON - ELECTRON PARAMAGNETIC RESONANCE + ELECTRON-NUCLEAR DOUBLE RESONANCE OF SI-E CENTER
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CORBETT, JW
[J]. PHYSICAL REVIEW, 1964, 134 (5A): : 1359 - +