HIGH-RESOLUTION ELECTRON-MICROSCOPY OBSERVATIONS OF PRECIPITATES IN P-SUPERSATURATED SILICON

被引：12

作者：

ARMIGLIATO, A ^{[1
]}

WERNER, P ^{[1
]}

机构：

[1] AKAD WISSENSCH DDR,INST FESTKOPERPHYS & ELEKTRONENMIKROSKOPIE,DDR-4020 HALLE SAALE,GER DEM REP

来源：

ULTRAMICROSCOPY | 1984年 / 15卷 / 1-2期

关键词：

D O I：

10.1016/0304-3991(84)90075-5

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

引用

页码：61 / 69

页数：9

共 24 条

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[13] PRECIPITATION AS THE PHENOMENON RESPONSIBLE FOR THE ELECTRICALLY INACTIVE PHOSPHORUS IN SILICON
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[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (03) : 1484 - 1491
[14] NOBILI D, 1982, SATELLITE S AGGREGAT, P189
[15] ISOCHRONAL ANNEALING OF SILICON-PHOSPHORUS SOLID-SOLUTIONS
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[16] OSUGI J, 1966, REV PHYS CHEM JPN, V36, P35
[17] DOUBLE CRYSTAL X-RAY-ANALYSIS OF PHOSPHORUS PRECIPITATION IN SUPERSATURATED SI-P SOLID-SOLUTIONS
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[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1983, 80 (01): : 277 - 285
[18] RESIDUAL LATTICE DISORDER IN SELF-IMPLANTED SILICON AFTER PULSED LASER IRRADIATION
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GARULLI, G
[J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1982, 70 (02): : 691 - 701
[19] ELECTRON-MICROSCOPY OF SILICON MONOPHOSPHIDE PRECIPITATES IN P-DIFFUSED SILICON
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[J]. JOURNAL OF MATERIALS SCIENCE, 1975, 10 (02) : 306 - 313
[20] SIFFERT P, 1978, P C LASER EFFECTS IO, P63

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