ADDUCTS IN MOVPE OF III-V COMPOUNDS

[1] A SIMPLIFIED TECHNIQUE FOR MOCVD OF III-V-COMPOUNDS [J]. JOURNAL DE PHYSIQUE, 1982, 43 (NC-5): : 491 - 503

[2] A NEW APPROACH TO MOCVD OF INDIUM-PHOSPHIDE AND GALLIUM-INDIUM ARSENIDE [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 129 - 134

[3] Nelson A., UNPUB

[4] DEFORMATION-FREE OVERGROWTH OF INGAASP DFB CORRUGATIONS [J]. ELECTRONICS LETTERS, 1983, 19 (02) : 34 - 36

[5] NEW APPROACH TO THE MANUFACTURE OF LOW-THRESHOLD 1.5 MU-M DISTRIBUTED FEEDBACK LASERS [J]. ELECTRONICS LETTERS, 1983, 19 (11) : 423 - 424

[1] A SIMPLIFIED TECHNIQUE FOR MOCVD OF III-V-COMPOUNDS [J]. JOURNAL DE PHYSIQUE, 1982, 43 (NC-5): : 491 - 503

[2] A NEW APPROACH TO MOCVD OF INDIUM-PHOSPHIDE AND GALLIUM-INDIUM ARSENIDE [J]. JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) : 129 - 134

[3] Nelson A., UNPUB

[4] DEFORMATION-FREE OVERGROWTH OF INGAASP DFB CORRUGATIONS [J]. ELECTRONICS LETTERS, 1983, 19 (02) : 34 - 36

[5] NEW APPROACH TO THE MANUFACTURE OF LOW-THRESHOLD 1.5 MU-M DISTRIBUTED FEEDBACK LASERS [J]. ELECTRONICS LETTERS, 1983, 19 (11) : 423 - 424