ROLE OF HG IN JUNCTION FORMATION IN ION-IMPLANTED HGCDTE

被引：49

|

作者：

BUBULAC, LO

TENNANT, WE

机构：

来源：

APPLIED PHYSICS LETTERS | 1987年 / 51卷 / 05期

关键词：

D O I：

10.1063/1.98439

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：355 / 357

页数：3

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