DIRECT TRANSITION + EXCITON EFFECTS IN PHOTOCONDUCTIVITY OF GALLIUM PHOSPHIDE

被引:33
作者
NELSON, DF
JOHNSON, LF
GERSHENZON, M
机构
来源
PHYSICAL REVIEW A-GENERAL PHYSICS | 1964年 / 135卷 / 5A期
关键词
D O I
10.1103/PhysRev.135.A1399
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:1399 / &
相关论文
共 35 条
[11]   SOME PROPERTIES OF P-N JUNCTIONS IN GAP [J].
GRIMMEISS, H ;
RABENAU, A ;
KOELMANS, H .
JOURNAL OF APPLIED PHYSICS, 1961, 32 :2123-&
[12]   P-N-JUNCTION PHOTOVOLTAIC EFFECT IN ZINC-DOPED GAP [J].
GRIMMEISS, HG ;
KISCHIO, W ;
KOELMANS, H .
SOLID-STATE ELECTRONICS, 1962, 5 (MAY-J) :155-159
[13]  
GRIMMEISS HG, 1960, PHILIPS RES REP, V15, P290
[14]  
GROSS EF, 1963, DOKL AKAD NAUK SSSR+, V153, P574
[15]  
GROSS EF, 1961, PHYS CHEM SOLIDS, V22, P87
[16]   INFRA-RED ABSORPTION IN GALLIUM PHOSPHIDE-GALLIUM ARSENIDE ALLOYS .2. ABSORPTION IN P-TYPE MATERIAL [J].
HODBY, JW .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (526) :324-&
[17]  
JOHNSON EJ, 1962, P INT C PHYS SEMICON, P375
[18]  
KANE EO, 1957, PHYS CHEM SOLIDS, V1, P249
[19]   INFRARED LATTICE ABSORPTION OF GAP [J].
KLEINMAN, DA ;
SPITZER, WG .
PHYSICAL REVIEW, 1960, 118 (01) :110-117
[20]   CHARGE MULTIPLICATION IN GAP-P-N-JUNCTIONS [J].
LOGAN, RA ;
CHYNOWETH, AG .
JOURNAL OF APPLIED PHYSICS, 1962, 33 (05) :1649-&