DIRECT TRANSITION + EXCITON EFFECTS IN PHOTOCONDUCTIVITY OF GALLIUM PHOSPHIDE

被引：33
作者：
NELSON, DF
JOHNSON, LF
GERSHENZON, M
机构：
来源：
PHYSICAL REVIEW A-GENERAL PHYSICS | 1964年 / 135卷 / 5A期
关键词：
D O I：
10.1103/PhysRev.135.A1399
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：1399 / &
相关论文
共 35 条
[1]   INFRA-RED ABSORPTION IN GALLIUM PHOSPHIDE-GALLIUM ARSENIDE ALLOYS .1. ABSORPTION IN N-TYPE MATERIAL [J].
ALLEN, JW ;
HODBY, JW .
PROCEEDINGS OF THE PHYSICAL SOCIETY OF LONDON, 1963, 82 (526) :315-&
[2]  
BUBE RH, 1962, PHYS REV, V128, P2062, DOI 10.1103/PhysRev.128.2062
[3]   TEMPERATURE DEPENDENCE OF PHOTO-HALL EFFECTS IN HIGH-RESISTIVITY GALLIUM ARSENIDE .2. 2-CARRIER EFFECTS [J].
BUBE, RH ;
MACDONALD, HE .
PHYSICAL REVIEW, 1962, 128 (05) :2071-&
[4]  
BUBE RH, 1961, PHYS CHEM SOLIDS, V22, P173
[5]  
EDWARDS AL, 1959, PHYS CHEM SOLIDS, V11, P140
[6]   BAND STRUCTURE AND TRANSPORT PROPERTIES OF SOME 3-5 COMPOUNDS [J].
EHRENREICH, H .
JOURNAL OF APPLIED PHYSICS, 1961, 32 :2155-&
[7]  
FROSCH CJ, UNPUBLISHED
[8]   LIGHT EMISSION FROM FORWARD BIASED P-N JUNCTIONS IN GALLIUM PHOSPHIDE [J].
GERSHENZON, M ;
MIKULYAK, RM .
SOLID-STATE ELECTRONICS, 1962, 5 (SEP-O) :313-&
[9]   VAPOR PHASE PREPARATION OF GALLIUM PHOSPHIDE CRYSTALS [J].
GERSHENZON, M ;
MIKULYAK, RM .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1961, 108 (06) :548-551
[10]  
GERSHENZON M, 1962, P INT C PHYS SEMICON, P752
1234