EMITTER-BASE JUNCTION SIZE EFFECT ON CURRENT GAIN HFE OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：81

作者：

NAKAJIMA, O

NAGATA, K

ITO, H

ISHIBASHI, T

SUGETA, T

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1985年 / 24卷 / 08期

关键词：

D O I：

10.1143/JJAP.24.L596

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：L596 / L598

页数：3

共 8 条

[1]

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ANDERSON, RJ ;

EISEN, FH .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (08) :310-312

[3]

Dubon C., 1983, International Electron Devices Meeting 1983. Technical Digest, P689

[4] EXTREMELY LOW RESISTANCE OHMIC CONTACTS TO NORMAL-GAAS FOR ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

ITO, H ;

ISHIBASHI, T ;

SUGETA, T .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1984, 23 (08) :L635-L637

[5] HIGH-FREQUENCY CHARACTERISTICS OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

ITO, H ;

ISHIBASHI, T ;

SUGETA, T .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (06) :214-216

[6] HETEROSTRUCTURE BIPOLAR-TRANSISTORS AND INTEGRATED-CIRCUITS [J].

KROEMER, H .

PROCEEDINGS OF THE IEEE, 1982, 70 (01) :13-25

[7]

Sze S. M., 1981, PHYSICS SEMICONDUCTO, P137

[8] MONTE-CARLO SIMULATION OF ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS [J].

TOMIZAWA, K ;

AWANO, Y ;

HASHIZUME, N .

IEEE ELECTRON DEVICE LETTERS, 1984, 5 (09) :362-364

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